Silicon carbide Powder Preparation

Plasma Synthesis Process

In this process a mixture of reactant gases of SiH4, CH4 and H2 is injected in the tail flame of RF Plasma in presence of argon gas. The reaction after rapid cooling yields ultra fine and ultra pure silicon carbide powder.

The silicon verses carbon ratio can be modified as per our requirement by adjusting the feed composition. In this process we can prepared very fine particle size powder of nano size with very high chemical purity and the process is always very expensive and hence used only for making very sophisticated advanced technical ceramics.

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